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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2524 DESCRIPTION *High Breakdown VoltageVCBO= 1700V (Min) *High Switching Speed *Low Saturation Voltage *Built-in Damper Diode APPLICATIONS *Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w ww scs .i UNIT 1700 V 1700 V 5 V 8 A 20 A 5 A .cn mi e ICM Collector Current-Peak IBM Base Current-Peak Collector Power Dissipation @ TC=25 100 W PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 3 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2524 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 2A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 2A B 1.5 V VCB= 1000V; IE= 0 ICBO Collector Cutoff Current VCB= 1700V; IE= 0 50 A hFE DC Current Gain IC= 6A; VCE= 5V VECF C-E Diode Forward Voltage fT Current-Gain--Bandwidth Product Resistive Load ts Storage Time w w w. IF= 8A IC= 0.1A; VCE= 10V sem isc .cn i 4 3 1.0 mA 10 2.0 V MHz 12 IC= 6A, IB(end)= 2A, Lleak= 5H s tf Fall Time 0.8 s isc Websitewww.iscsemi.cn 2 |
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